HPGe Germanium detectors are semiconductor diodes having a p-i-n structure in which the intrinsic (I) region is sensitive to ionizing radiation, particularly x rays and gamma rays. Under reverse bias, an electric field extends across the intrinsic or depleted region. When photons interact with the material within the depleted volume of a detector, charge carriers (holes and electrons) are produced and are swept by the electric field to the P and N electrodes. This charge, which is in proportion to the energy deposited in the detector by the incoming photon, is converted into a voltage pulse by an integral charge sensitive preamplifier.

Standard Electrode Coaxial Ge Detectors (SEGe)

Broad Energy Germanium Detectors (BEGe)


Reverse Electrode Coaxial Ge Detectors (REGe)


Extended Range Coaxial Ge Detectors (XtRa)

Small Anode Germanium Well Detectors (SAGe Well)

Traditional Germanium Well Detectors

Low Energy Germanium Detectors (LEGe)

Ultra-LEGe Detectors (GUL)

ACT-LC - HPGe Detector for Actinide Lung and Whole Body Counters

Germanium Array Detectors