High speed with Si PD, 200MHz, Free space
Part number: HCA-S-200M-SI-FSRequest a quotation
- Si Photodiode
- Wavelength Range; 320 to 1000 nm
- Bandwidth from Real DC to 200 MHz
- Max. Conversion Gain 1.1 x 10^4 V/W Min. NEP approx. 9.3 pW/√Hz
900..1000nm photodiode, 1.1x10^4 V/W gain, NEP 9.3 pW/√Hz, saturation power 110 µW.
High Sensitivity at High Bandwidth
The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M-SI is available with either a fast large area Si photodiode covering a spectral range from 320 to 1000 nm. The amplifier transimpedance is 2 x 10^4 V/A resulting in a maximum conversion gain of 1.1 x 10^4 V/W at 900 nm. The sophisticated DC coupled multi-stage amplifier design allows measurements from DC to a maximum bandwidth of 200 MHz corresponding to a minimum rise-time of 1.8 ns. With a NEP as low as 6 pW/√Hz signals with an optical power in the micro-Watt range can be detected without the need for further averaging.
Standard delivery time: 3 weeks ARO, Conditions: Ex.Works Germany unless specified
|Photodiode||0.8 mm Ø Si PIN|
|Spectral Range||320 ... 1000 nm|
|Bandwidth (-3 dB)||DC ... 200 MHz|
|Rise/Fall Time (10% - 90%)||1.8 ns|
|Transimpedance Gain||2 x 104 V/A|
|Max. Conversion Gain||1.1 x 104 V/W (@ 800 nm)|
|Min NEP (@ 10 MHz)||10 pW/√Hz (@ 800 nm)|
|Available Input Options||Free space (FS), FC or SMA|
Output voltage ±1.7 V max (@ 50 Ω load). Offset adjustable by potentiometer. AC coupled units are optionally available. Output short-circuit protected. The photoreceivers with free space input come with threaded M4 and 8-32 mounting holes for use with standard mounting posts. Power supply ±15 V via 3-pin Lemo® socket. A mating connector is provided with the device. Optional power supply PS-15 available. For further information please view the datasheet or contact FEMTO.