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High speed with Si PD, 200MHz, Free space

Part number: HCA-S-200M-SI-FS

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          Features
  • Si Photodiode 
  • Wavelength Range; 320 to 1000 nm 
  • Bandwidth from Real DC to 200 MHz 
  • Max. Conversion Gain 1.1 x 10^4 V/W Min. NEP approx. 9.3 pW/√Hz

900..1000nm photodiode, 1.1x10^4 V/W gain, NEP  9.3 pW/√Hz, saturation power 110 µW.

High Sensitivity at High Bandwidth

The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M-SI is available with either a fast large area Si photodiode covering a spectral range from 320 to 1000 nm. The amplifier transimpedance is 2 x 10^4 V/A resulting in a maximum conversion gain of 1.1 x 10^4 V/W at 900 nm. The sophisticated DC coupled multi-stage amplifier design allows measurements from DC to a maximum bandwidth of 200 MHz corresponding to a minimum rise-time of 1.8 ns. With a NEP as low as 6 pW/√Hz signals with an optical power in the micro-Watt range can be detected without the need for further averaging.

Standard delivery time: 3 weeks ARO, Conditions: Ex.Works Germany unless specified

Model HCA-S-200M-SI
Photodiode 0.8 mm Ø Si PIN
Spectral Range 320 ... 1000 nm
Bandwidth (-3 dB) DC ... 200 MHz
Rise/Fall Time (10% - 90%) 1.8 ns
Transimpedance Gain 2 x 104 V/A
Max. Conversion Gain 1.1 x 10V/W (@ 800 nm)
Min NEP (@ 10 MHz) 10 pW/√Hz (@ 800 nm)
Available Input Options Free space (FS), FC or SMA

Output voltage ±1.7 V max (@ 50 Ω load). Offset adjustable by potentiometer. AC coupled units are optionally available. Output short-circuit protected. The photoreceivers with free space input come with threaded M4 and 8-32 mounting holes for use with standard mounting posts. Power supply ±15 V via 3-pin Lemo® socket. A mating connector is provided with the device. Optional power supply PS-15 available. For further information please view the datasheet or contact FEMTO.