Pulsed RF GD-OES is the only technique that can provide both surface, depth profile and bulk composition, and with high sensitivity to all elements (including the gaseous elements), for almost all solid materials, including metals, metal alloy coatings, semiconductors, polymer coatings, glass, etc.
It relies on the controlled sputtering of a representative area of the material of interest and the simultaneous detection of the sputtered species. As an analytical technique it nicely complements XPS and SEM.
Pulsed RF source and unique double differential pumping for
optimum crater shape and resolution.
High resolution simultaneous optics (1m focal length) with
full spectral coverage from 110 to 800nm, including VUV...
RF-Only generator is Class E standard and optimized for
stability and crater shape allowing for real surface
Source can be pulsed with synchronized acquisition for
optimum results on fragile samples. The...
Plasma Profiling TOFMS
The simultaneous full coverage of TOFMS available for each
point of depth permits the detection of non suspected
contamination. This is key for failure analysis and
optimization of thin film processes that tend...